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| Composite Transistors XN4609 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output (Tr1) For general amplification (Tr2) 2.8 -0.3 0.650.15 6 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 2.9 -0.05 1.90.1 s Features q q 0.95 +0.2 5 2 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.95 4 3 s Basic Part Number of Element q 1.1-0.1 0.40.2 s Absolute Maximum Ratings (Ta=25C) Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Ratings 25 20 12 0.5 1 -60 -50 -7 -100 -200 300 150 -55 to +150 Unit V V V A A 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 5F Internal Connection 6 Tr1 1 2 3 Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage V V V mA mA mW C C 5 4 Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Tr2 Overall Junction temperature Storage temperature 0 to 0.05 2SD1328+2SB709A 0.1 to 0.3 0.8 0.16-0.06 +0.2 +0.1 1.450.1 +0.1 +0.1 1 Composite Transistors XN4609 (Ta=25C) Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*2 Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 25V, IE = 0 VCE = 2V, IC = 0.5A*1 VCE = 2V, IC = 1A*1 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 20mA VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 10 1.0 200 60 0.13 0.4 1.2 V V MHz pF min 25 20 12 0.1 800 typ max Unit V V V A s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON Resistance q Tr2 Parameter Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -20V, IE = 0 VCE = -10V, IE = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 160 - 0.3 80 2.7 min -60 -50 -7 - 0.1 -100 460 V MHz pF typ max Unit V V V A A Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1 *2 Pulse measurement Ron test circuit IB=1mA f=1kHz V=0.3V 1k VB VV VA VB Ron= !1000() VA-VB 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN4609 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 1.2 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=25 100 VBE(sat) -- IC IC/IB=10 Base to emitter saturation voltage VBE(sat) (V) 1.0 IB=4.0mA 3.5mA 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 -25C Ta=75C 25C 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Collector current IC (A) 0.8 3.0mA 2.5mA 0.6 2.0mA 1.5mA 0.4 1.0mA 0.2 0.5mA 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Collector to emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) hFE -- IC 1200 VCE=2V 400 350 300 250 200 150 100 50 fT -- I E 24 Cob -- VCB Collector output capacitance Cob (pF) VCB=10V Ta=25C f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE 1000 Transition frequency fT (MHz) 20 800 Ta=75C 600 25C -25C 16 12 400 8 200 4 0 0.01 0.03 0.1 0.3 1 3 10 0 -1 0 -2 -3 -5 -10 -20 -30 -50 -100 1 2 3 5 10 20 30 50 100 Collector current IC (A) Emitter current IE (mA) Collector to base voltage VCB (V) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -60 Ta=25C -50 IB=-300A -50 -60 VCE= - 5V Ta=25C XN4609 IC -- I B -400 -350 IB -- VBE VCE=- 5V Ta=25C Collector current IC (mA) Collector current IC (mA) -250A -40 -200A -30 -40 Base current IB (A) -300 -250 -200 -150 -100 -50 0 -150A -30 -20 -100A -20 -10 -50A -10 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 0 0 -100 -200 -300 -400 0 -0.4 -0.8 -1.2 -1.6 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) IC -- VBE -240 VCE(sat) -- IC -10 hFE -- IC IC/IB=10 600 VCE= -10V Collector to emitter saturation voltage VCE(sat) (V) VCE=-5V -200 25C Ta=75C -160 -25C Forward current transfer ratio hFE -3 -1 -0.3 -0.1 -0.03 -0.01 Ta=75C 25C -25C 500 Collector current IC (mA) 400 Ta=75C 300 25C -25C 200 -120 -80 -40 100 -0.003 -0.001 -1 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 160 140 120 100 80 60 40 20 0 0.1 Cob -- VCB 8 6 f=1MHz IE=0 Ta=25C NF -- IE VCB=-5V f=1kHz Rg=2k Ta=25C Collector output capacitance Cob (pF) VCB=-10V Ta=25C Transition frequency fT (MHz) 7 6 5 4 3 2 1 0 -1 5 Noise figure NF (dB) -2 -3 -5 -10 -20-30 -50 -100 4 3 2 1 0.3 1 3 10 30 100 0 0.01 0.03 0.1 0.3 1 3 10 Emitter current IE (mA) Collector to base voltage VCB (V) Emitter current IE (mA) 4 Composite Transistors NF -- IE 20 18 16 VCB=-5V Rg=50k Ta=25C 300 200 hfe 100 100 XN4609 h Parameter -- IE 300 200 hfe h Parameter -- VCE IE=2mA f=270Hz Ta=25C Noise figure NF (dB) 14 12 10 8 6 4 2 0 0.1 1kHz 10kHz 5 3 2 1 0.1 hre 0.2 0.3 0.5 (x10-4) 1 2 VCE= - 5V f=270Hz Ta=25C 3 5 10 hie (k) 5 3 2 1 -1 hre (x10-4) hie (k) Parameter h f=100Hz 30 20 10 hoe (S) Parameter h 50 50 30 20 hoe (S) 10 0.2 0.3 0.5 1 2 3 5 10 -2 -3 -5 -10 -20 -30 -50 -100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 5 |
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